Structure de mise en forme 2 colonnes
  • Friday 20 April 2018
  • Concerning the diode-laser crystallization process of a-Si layers on glass :Concerning the development of a SPE process on multi-crystalline seed layer on glass :Concerning the relation between process parameters and material quality:
    - Develop a custom made laser diode array (line focus of 30 cm and 7 kW/cm3 power density) having a line focus to crystallize a-Si layers on glass of entire PV modules within a single scan.
    - Establish the optimum parameter set based on experiments and numerical simulations to obtain large and low defective grains during the solidification process.
    - Materials optimization with large grains, internally low defect density at low stress levels.
    - Establish the thickening of a large grain seed layer by optimizing an SPE process of a-Si so that epitaxial re-growth on the seed is possible while low temperature processes are used to remain compatible with the glass softening temperature.
    - Establish the suitable surface preparation of the seed layer silicon so that epitaxy in an SPE process is possible.
    - Establish and use Electron Back Scatter Diffraction (EBSD) and Raman Spectroscopy to determine internal stress in the crystalline silicon film.
    - Use the Transmission Electron Microscopy (TEM) to determine extended defects, to optimize process, and to explore interrelation to electronic quality.